Light-emitting device and light-emitting array

ABSTRACT

A light-emitting device includes a light-emitting stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a first surface, a second surface opposite to the first surface, a first portion connecting to the first surface, and a second portion connecting to the first portion; an opening penetrating the first portion from the first surface and having a first width; a depression connecting to the opening and penetrating the second semiconductor layer, the active layer, and the second portion of the first semiconductor layer, wherein the depression includes a second width greater than the first width, and the depression includes a bottom to expose the second surface, and an electrode located in the depression and corresponding to the opening.

REFERENCE TO RELATED APPLICATION

This application claims the right of priority based on TW applicationSerial No. 102122124, filed on Jun. 20, 2013 and Serial No. 103115304,filed on, Apr., 28, 2014, and the content of which is herebyincorporated by reference in its entirety.

TECHNICAL FIELD

The disclosure is related to a light-emitting device, and moreparticularly, a light-emitting device and a light-emitting array with aconnecting layer between a substrate and a light-emitting stack.

DESCRIPTION OF THE RELATED ART

The lighting theory of light-emitting diodes (LEDs) is that electronsmove between an n-type semiconductor and a p-type semiconductor torelease energy. Due to the difference of lighting theories between LEDsand incandescent lamps, the LED is called “cold light source”. An LEDhas the advantages of good environment tolerance, a long service life,portability, and low power consumption and is regarded as another optionfor the lighting application. LEDs are widely adopted in differentfields, for example, traffic lights, backlight modules, street lights,and medical devices and replaces conventional light sources gradually.

An LED has a light-emitting stack which is epitaxially grown on aconductive substrate or an insulting substrate. The so-called “verticalLED” has a conductive substrate and includes an electrode formed on thetop of a light emitting layer; the so-called “lateral LED” has aninsulative substrate and includes electrodes formed on two semiconductorlayers which have different polarities and exposed by an etchingprocess. The vertical LED has the advantages of small light-shading areafor electrodes, good heat dissipating efficiency, and no additionaletching epitaxial process, but has a shortage that the conductivesubstrate served as an epitaxial substrate absorbs light easily and isadverse to the light efficiency of the LED. The lateral LED has theadvantage of radiating light in all directions due to a transparentsubstrate used as the insulator substrate, but has shortages of poorheat dissipation, larger light-shading area for electrodes, and smallerlight-emitting area caused by epitaxial etching process.

The abovementioned LED can further connects to/with other device forforming a light-emitting device. For a light-emitting device, the LEDcan connect to a carrier by a side of a substrate or by solderingmaterial/adhesive material between a sub-carrier and the LED.

SUMMARY OF THE DISCLOSURE

A light-emitting device includes a light-emitting stack including afirst semiconductor layer, a second semiconductor layer, and an activelayer between the first semiconductor layer and the second semiconductorlayer, wherein the first semiconductor layer includes a first surface, asecond surface opposite to the first surface, a first portion connectingto the first surface, and a second portion connecting to the firstportion; an opening penetrating the first portion and having a firstwidth; a depression connecting to the opening and penetrating the secondsemiconductor layer, the active layer, and the second portion of thefirst semiconductor layer, wherein the depression includes a secondwidth wider than the first width, and the depression includes a bottomto expose the second surface; and an electrode located in the depressionand corresponding to the opening.

A light-emitting array includes a substrate having an upper surface,light-emitting units on the upper surface of the substrate, wherein eachof the light-emitting units includes a first surface and a secondsurface opposite to the first surface and toward to the upper surface;an insulative layer, between the substrate and the light-emitting unit,covering the second surface of each of the light-emitting units; and atleast one of wires embedded in the insulative layer, wherein each of theat least one of wires includes a conductive channel, penetrating theinsulative layer and electrically connecting with the second surface,and a bridge electrically connecting with the conductive channel, and atleast one of the bridges electrically connects two of the light-emittingunits via a plurality the conductive channels.

BRIEF DESCRIPTION OF THE DRAWING

The accompanying drawing is included to provide easy understanding ofthe application, and is incorporated herein and constitutes a part ofthis specification. The drawing illustrates the embodiment of theapplication and, together with the description, serves to illustrate theprinciples of the application.

FIGS. 1A to 1H illustrate a light-emitting device in accordance with amanufacturing method of a first embodiment of the application.

FIG. 2 illustrates a light-emitting device in accordance with a secondembodiment of the application.

FIG. 3 illustrates a light-emitting device in accordance with a thirdembodiment of the application.

FIG. 4 illustrates an electrode layout of the light-emitting device inaccordance with the first embodiment of the application.

FIG. 5 illustrates an electrode layout of the light-emitting device inaccordance with the forth embodiment of the application.

FIG. 6 illustrates an electrode layout of the light-emitting device inaccordance with a fifth embodiment of the application.

FIG. 7 illustrates an electrode layout of the light-emitting device inaccordance with a sixth embodiment of the application.

FIG. 8 illustrates an electrode layout of the light-emitting device inaccordance with a seventh embodiment of the application.

FIG. 9 illustrates an electrode layout of the light-emitting device inaccordance with an eighth embodiment of the application.

FIG. 10 illustrates an electrode layout of the light-emitting device inaccordance with a ninth embodiment of the application.

FIG. 11 illustrates a light-emitting array in accordance with a tenthembodiment of the application.

FIG. 12 illustrates a light-emitting array in accordance with aneleventh embodiment of the present application.

FIG. 13 illustrates a light-emitting array in accordance with a twelfthembodiment of the application.

FIG. 14 illustrates a light-emitting array in accordance with athirteenth embodiment of the application.

DETAILED DESCRIPTION OF THE EMBODIMENTS

To better and concisely explain the disclosure, the same name or thesame reference number given or appeared in different paragraphs orfigures along the specification should has the same or equivalentmeanings while it is once defined anywhere of the disclosure.

The following shows the description of embodiments of the presentdisclosure in accordance with the drawing.

Referring to FIGS. 1A to 1H, the figures illustrate a light-emittingdevice in accordance with a manufacturing method of a first embodimentof the application. As shown in FIG. 1A, a light-emitting stack 108which is epitaxially grown on a growth substrate 101 includes a firstsemiconductor layer 102, a second semiconductor layer 106, and an activelayer 104 between the first semiconductor layer 102 and the secondsemiconductor layer 106. The light-emitting stack 108 can be a nitridelight-emitting stack and a material of the light-emitting stack 108containing elements like aluminum (Al), indium (In), gallium (Ga), ornickel (N). The growth substrate 101 can be made of a transparentinsulative substrate, such as sapphire, or a conductive substrate, suchas silicon (Si) substrate or silicon carbide (SiC) substrate. Forreducing lattice mismatch between the growth substrate 101 and thelight-emitting stack 108, a buffer layer 103 can be formed on the growthsubstrate 101 before forming the light-emitting stack 108. A material ofthe light-emitting stack 108 can contain elements like aluminum (Al),gallium (Ga), indium (In), phosphorus (P), or arsenic (As), and amaterial of the growth substrate 101 can be gallium arsenide (GaAs). Thefirst semiconductor layer 102, the active layer 104, the secondsemiconductor layer 106 are epitaxially grown on the growth substrate101. Herein, the first semiconductor layer 102 can be an n-typesemiconductor, the second semiconductor layer 106 can be a p-typesemiconductor, and a structure of the light-emitting stack 108 includesa single heterostructure (SH), a double-side double heterostructure(DDH), or multi-quantum well (MQW) structure.

Referring to FIG. 1B, a depression 105 is formed, penetrates the secondsemiconductor layer 106 and the active layer 104, and exposes the firstsemiconductor layer 102. The depression 105 has a pattern and anelectrode 110 which is corresponding to the pattern is formed in thedepression 105. Afterwards, a conductive layer 112 is formed on thesecond semiconductor layer 106. Herein, the electrode 110 electricallyconnects with only the first semiconductor layer 102, and in across-sectional view, there is a gap between two sides of the electrode110 and the depression 105 so the electrode 110 is insulated from theactive layer 104 and the second semiconductor layer 106. The conductivelayer 112 has ohmic contact with the second semiconductor layer 106 andcan be a transparent conductive layer, such as indium tin oxide (ITO),indium zinc oxide (IZO) or aluminum-doped zinc oxide (A ZO), or metalmaterial, such as, nickel (Ni), platinum (Pt), palladium (Pd), silver(Ag), or chromium (Cr). The electrode 110 can be aluminum (Al), titanium(Ti), chromium (Cr), platinum (Pt), gold (Au), or combinations thereof.

Referring to FIG. 1C, a barrier 116 covering the conductive layer 112and an insulative structure 114 covering the electrode 110 are formed.The barrier 116 covers all surface of the conductive layer 112 exceptthe region contacting the second semiconductor layer 106. The pattern ofthe insulative structure 114 is substantially corresponding to thepattern of the electrode 110 while the insulative structure 114 fills aspace between the electrode 110 and the depression 105. The uppersurface 114 a of the insulative structure 114 and the upper surface 116a of the barrier 116 are coplanar and the barrier 116 horizontallysurrounds the insulative structure 114, except the portion in thedepression 105. The insulative structure 114 includes transparentmaterial and is formed by evaporating, sputtering, or spin-on glass(SOG) to form single-layer of SiO₂, single-layer of TiO₂, orsingle-layer of Si₃N₄ and then solidifying. The barrier 116 can besingle-layer or multi-layer structure and includes titanium (Ti),tungsten (W), platinum (Pt), titanium tungsten (TiW) or combinationsthereof.

Referring to FIG. 1D, a reflective layer 118 is formed on a plane onwhich the upper surface 114 a of the insulated layer 114 and the uppersurface 116 a of the barrier 116 lie. The reflective layer 118 caninclude aluminum (Al).

Referring to FIG. 1E, a conductive substrate 122 is provided andconnects to a metal layer 118 via a joining structure 120. The joiningstructure 120 includes gold (Au), indium (In), nickel (Ni), titanium(Ti), or combinations thereof. Consequentially, a process of removingthe growth substrate 101 is performed. The conductive substrate 122includes a semiconductor material, such as silicon (Si), or a metalmaterial, such as, cobalt (Cu), tungsten (W), or aluminum (Al).Moreover, a surface of the conductive substrate 122 can be graphene.

Referring to FIG. 1F, a laser ray (not shown in FIG. 1F) is provided toa back surface of the growth substrate 101 to dissolve a buffer layer103 by energy from the laser ray. For example, when the buffer layer 103is non-doped or unintentional-doped GaN, the energy from the laser raycan evaporate nitrogen in gallium nitride (GaN), so as to dissolve thebuffer layer 103 and remove the growth substrate 101 so the firstsemiconductor 102 is exposed.

Referring to FIG. 1G, the remaining buffer layer 103 on the firstsemiconductor layer 102 is further removed. When the buffer layer 103 isnon-doped or unintentional-doped gallium nitride, because the nitrogenin gallium nitride has been evaporated in the abovementioned process bythe laser ray, a cleaning step is performed to mainly remove theremaining gallium in the step by inductively coupled plasma (ICP), andthe surface of the first semiconductor layer can be further cleaned byHCl or H₂O₂.

Referring to FIG. 1H, a roughed structure 126 is formed on the firstsurface 102 a of the first semiconductor layer 102 by etching. Theroughed structure 126 can have a regular or irregular rough surface witha roughness of 0.5˜1 μm, and an opening 124 is formed by removing aportion of the first semiconductor layer 102 which is on the electrode110. The depression 105 has width W1 greater than a width W2 of theopening 124, and therefore, after the depression 105 and the opening areformed in sequence, a second surface 102 d opposite to the first surface102 a is formed at the bottom of the first semiconductor layer 102connecting to the depression 105, and the electrode 110 connects to thesecond surface 102 d and is formed in the depression 105 correspondingto the opening 124 wherein the electrode has a width W3 greater than thewidth W2. The upper surface 110 a of the electrode 110 has a contactarea 110 b connecting to the second surface 102 d of the firstsemiconductor layer 102 and an exposed area 110 c exposed by the opening124. A thickness of the first semiconductor 102 can be 3˜4 μm while thefirst semiconductor 102 has a first portion 102 b and a second portion102 c. The thickness of the first portion 102 b is about equal to thedepth of the opening 124, which is about 1.5˜3 μm. The thickness of thesecond portion 102 c corresponding to the depression 105 is about 1˜1.5μm. Because the electrode 110 electrically connects to the firstsemiconductor layer 102 while is not formed on the first surface 102 a,the electrode 110 does not shield the light from the light-emittingdevice 100.

With the abovementioned processes, the light-emitting device 100disclosed in the embodiment includes the conductive substrate 122; thejoining structure 120 formed on the conductive substrate 122; thereflective layer 118 formed on the joining structure 120; the conductivestructure 117 including the barrier 116 formed on a portion of thereflective layer 118, and the conductive layer 112 covered by thebarrier 116; the light-emitting stack 108 including the firstsemiconducting layer 102, the active layer 104, and the secondsemiconducting layer 106 electrically connecting with the conductivelayer 112; the insulative structure 114 formed on a portion of thereflective layer 118 and penetrating the second semiconducting layer106, the active layer 104, and the second part 102 c of the firstsemiconducting layer 102; the electrode 110 covered by the insulativestructure 124 wherein the upper surface 110 a of the electrode 110connects to the first semiconducting layer 102; and the opening 124penetrating the first portion 102 b of the first semiconducting layer102. Herein, the insulative structure 114 insulates the electrode 110from the second semiconductor 106 and the active layer 104, and theelectrode 110 and the active layer 104 are on different regions alongthe horizontal direction of the light-emitting device 100 while thewhole active layer 104 is located above the conductive structure 117.Therefore, the light from the active layer 104 is not shielded by theelectrode 110 of the light-emitting device 100 and the conductivestructure 117. The upper surface 110 a of the electrode 110 can beconnected with an external power source.

FIG. 2 illustrates a light-emitting device in accordance with a secondembodiment of the application. The second embodiment and the firstembodiment are similar, but the difference between them is that a wiringelectrode 211 is formed on an electrode 210 and the wiring electrode 211is in an opening 204 for a soldering ball for wiring (not shown in FIG.2).

FIG. 3 illustrates a light-emitting device in accordance with a thirdembodiment of the application. The third embodiment is similar to theaforementioned embodiments, but the differences between them arementioned as follows. A conductive layer 308 which electrically connectswith a second semiconductor layer 306 is a transparent conductive layerwithout reflectivity, such as indium tin oxide (ITO), indium zinc oxide(IZO), or aluminum-doped zinc oxide (Al ZO), and there is no barrier asshown in the first embodiment. An insulative structure 314 can includean insulative layer 314 a between a light-emitting stack 310 and areflective layer 318, and an insulative portion 314 b covers theelectrode 311. A plurality of conductive channels 316 penetrates theinsulative layer 314 a and connects the conductive layer 308 and thereflective layer 318 by its two ends respectively. A joining structure320 and a conductive substrate 322 same as those described in the firstembodiment are below the reflective layer 318. The conductive channel316 can be a metal well to fill pores like titanium (Ti), aluminum (Al),nickel (Ni), chromium (Cr), or copper (Cu). The insulative structure 314can be a transparent insulative material and is formed by evaporating,sputtering, or spin-on glass (SOG) to form single-layer of SiO₂,single-layer of TiO₂, or single-layer of Si₃N₄, and then solidifying oralternatively stacking two different films with different index ofrefraction to form a distributed Bragg reflector (DBR).

FIG. 4 illustrates an electrode layout of the light-emitting device inaccordance with the first embodiment of the application. The electrodelayout can also be utilized in the second embodiment and the thirdembodiment. In the embodiment, it shows only patterns of the electrode110 and the conductive structure 117 for clearly showing the pattern ofthe electrode. From top view, the conductive substrate 122 of thelight-emitting device 100 is a rectangle with a size of 1 mil to 70mils. The electrode disclosed in the embodiment includes a wiringelectrode 110 and an extensive electrode 111 extending from the wiringelectrode 110. The wiring electrode 110 is located near a corner of therectangle of the light-emitting device 100, and the extensive electrode111 includes a first extensive electrode 111 b along outer edges of thelight-emitting device 100 and a second extensive electrode 111 asurrounding by and connecting to the first extensive electrode 111 b.The first extensive electrode 111 b and the second electrode 111 a formanother rectangle. The wiring electrode 110, and/or the extensiveelectrode 111, and the conductive structure 117 are formed on differentregions of the conductive substrate 122 and do not overlap with oneanother. Therefore, the conductive structure 117 as shown in the regionwith slash lines substantially complements the patterns of the wiringelectrode 110 and the extensive electrode 111.

FIG. 5 shows an electrode layout of a light-emitting device inaccordance with a fourth embodiment of the application. The electrodelayout can be utilized in the first embodiment to the third embodiment.FIG. 5 illustrates only the electrodes and the conductive structure ofthe above-mentioned embodiment for clearly showing patterns on theelectrodes. From top view, a conductive substrate 522 of alight-emitting device 500 is a rectangle. The electrodes shown in theembodiment include a wiring electrode 510 and an extensive electrode 511extending from the wiring electrode 510. The wiring electrode 510 issubstantially located at a geometric center of the light-emitting device500 and the extensive electrode 511 optionally includes a plurality ofradial branches extending from the wiring electrode 510. The wiringelectrode 510, and/or the extensive electrode 511, and a conductivestructure 517 are formed on different regions of the conductivesubstrate 522 and do not overlap with one another. Therefore, theconductive structure 517 as shown in the region with slash linessubstantially complements the pattern formed by the wiring electrode 510and the extensive electrode 511.

FIG. 6 shows an electrode layout of a light-emitting device inaccordance with a fifth embodiment of the application. The electrodelayout can be utilized in the first embodiment to the third embodiment.From top view, a conductive substrate 622 of a light-emitting device 600is a rectangle. The electrodes disclosed in the embodiment include awiring electrode 610 and an extensive electrode 611 extending from thewiring electrode 610. The wiring electrode 610 is substantially locatedat a geometric center of the light-emitting device 600 and the extensiveelectrode 611 includes a plurality of radial branches extending from thewiring electrode 610. In comparison with the fifth embodiment, there aremore radial branches in the embodiment and lengths of the radialbranches vary with their extended directions. For example, a length ofthe radial branch of the extensive electrode 611 along a diagonal of therectangle of the light-emitting device 600 is longer than a length ofthe radial branch along a side of the rectangle. The wiring electrode610, and/or the extensive electrode 611, and a conductive structure 617are formed on different regions of the conductive substrate 622 and donot overlap with one another. Therefore, the conductive structure 617 asshown in the region with slash lines complements the pattern formed bythe wiring electrode 610 and extensive electrode 611.

FIG. 7 illustrates an electrode layout of a light-emitting device inaccordance with a sixth embodiment of the application. The electrodelayout can be utilized in the first embodiment to the third embodiment.From top view, a conductive substrate 722 of a light-emitting device 700is a rectangle. The electrodes disclosed in the embodiment include awiring electrode 710 and an extensive electrode 711 extending from thewiring electrode 710. The wiring electrode 710 is substantially locatedat a corner of the rectangle of the light-emitting device 700, and theextensive electrode 711 includes a plurality of radial branchesextending from the wiring electrode 710 with lengths that vary withtheir extensive angles respectively. The wiring electrode 710, and/orthe extensive electrode 711, and a conductive structure 717 are formedon different regions of the conductive substrate 722 and do not overlapwith one another. Therefore, the conductive structure 717 as shown inthe region with slash lines substantially complements the pattern formedby the wiring electrode 710 and extensive electrode 711.

FIG. 8 illustrates an electrode layout of a light-emitting device inaccordance with a seventh embodiment of the application. The electrodelayout can be utilized in the first embodiment to the third embodiment.From top view, a conductive substrate 822 of a light-emitting device 800is a rectangle. The electrodes disclosed in the embodiment includewiring electrodes 810 a and 810 b near a side of the rectangle of thelight-emitting device 800, an extensive electrode 811 including radialbranches 811 a and 811 b extending from the wiring electrode 810 a and810 b to another side of the rectangle, a radial branch 811 c connectingto the wiring electrodes 810 a and 810 b by its two ends and parallel toa side of the rectangle, and a radial branch 811 d extending from theradial branch 811 c and parallel to the radial branches 811 a and 811 b.The wiring electrode 810 a and 810 b, and/or the extensive electrode811, and the conductive structure 817 are formed on different regions ofthe conductive substrate 822 and do not overlap with one another, andtherefore the conductive structure 817 as shown in the region with slashlines substantially complements the patterns of the wiring electrode 810a and 810 b and extensive electrode 811.

FIG. 9 it illustrates an electrode layout of a light-emitting device inaccordance with an eighth embodiment of the application. The electrodelayout can be utilized in the first embodiment to the third embodiment.From top view, a conductive substrate 922 of a light-emitting device 900is a rectangle. The electrodes disclosed in the embodiment includewiring electrodes 910 a and 910 b near a side of the rectangle of thelight-emitting device 900 and an extensive electrode 911 includingradial branches 911 a and 911 b extending from the wiring electrodes 910a and 910 b to another side of the rectangle. The embodiment is similarto the seventh embodiment, but the differences include that the radialbranches 911 a and 911 b are sinuous and extending from the wiringelectrodes 910 a and 910 b, and there are multiple radial branches 911 aand 911 b extended from the wiring electrodes 910 a and 910 brespectively. The wiring electrode 910, and/or the extensive electrode911, and the conductive structure 917 are formed on different regions ofthe conductive substrate 922 and do not overlap with one another.Therefore, the conductive structure 917 as shown in the region withslash lines substantially complements the patterns of the wiringelectrode 910 and extensive electrode 911.

FIG. 10 illustrates an electrode layout of a light-emitting device inaccordance with a ninth embodiment of the application. The electrodelayout can be utilized in the first embodiment to the third embodiment.From top view, a conductive substrate 1022 of the light-emitting deviceis a rectangle. The electrodes disclosed in the embodiment include twowiring electrodes 1010 a and 1010 b near two corners of the rectangle ofthe conductive substrate 1022, and an extensive electrode 1011 includinga first radial branch 1011 a along the rectangle of the conductivesubstrate 1002 and connecting to the wiring electrodes 1010 a and 1010b, and a second radial branch 1011 b connecting to two opposite sides ofthe rectangle of the first radial branch 1011 a and forming a netpattern with the first radial branch 1011 a. The wiring electrode 1010,and/or the extensive electrode 1011, and the conductive structure 1017are formed on different regions of the conductive substrate 1022 and donot overlap with one another. Therefore, the conductive structure 1017as shown in the region with slash lines substantially complements thepatterns of the wiring electrode 1010 and extensive electrode 1011.

FIG.11 illustrates a light-emitting array in accordance with a tenthembodiment of the application. The light-emitting array 1100 includes aninsulative substrate 1110 including an upper surface 1110 a, a joininglayer 1124 formed on the upper surface 1110 a and being insulative, aninsulative layer 1114 formed on the joining layer 1124, a plurality oflight-emitting units 112 formed on the insulative layer 1114, whereineach of the light-emitting units 112 includes a first surface 1113 and asecond surface 1115. The first surface 1113 has a first polarity, andthe second surface 115 is toward to the insulative substrate 1110opposite to the first surface 1113 and includes a first region 1115 awith the first polarity and a second region 1115 b with a secondpolarity. A plurality of wires 1116 is embedded in the insulative layer1114 and electrically connecting with two of the light-emitting units1112, for example, connecting to the second region 1115 b of at leastone of the light-emitting units 1112 and the first region 1115 a ofanother one of the light-emitting units 1112. A first electrode 1118 isformed on the insulative layer 1114, electrically connecting with thefirst region 1115 a of one of the light-emitting units 1112, and locatedin different region than that of the light-emitting units 1112 on theinsulative layer 1114. A second electrode 1120 is formed on theinsulative layer 1114, electrically connecting with the second region1115 b of one of the light-emitting units 1112, and located in differentregion than that of the light-emitting units 1112 on the insulativelayer 1114.

The light-emitting units 1112 are epitaxially grown on the same wafer(not shown in figures). After epitaxially growth, the first surface 1113connects to the wafer and the second surface 1115 faces up. The firstregion 1115 a and the second region 1115 b of the second surface 1115can be defined by an etching process as the light-emitting units 1112are not defined yet. After carrying the light-emitting unit 1112 on theinsulative substrate 1110 via the joining layer 1124, the wafer can beremoved and the first surface 1113 is exposed. In sequence, a pluralityof the light-emitting units 1112 electrically insulated from one anothercan be formed from the first surface 1113 by an etching process.Additionally, the first surface 1113 similar to the one in the firstembodiment is a rough surface.

The insulative layer 1114 can include a first insulative layer 1114 aand a second insulative layer 1114 b and is made of silicon oxide SiO₂,for example. The first insulative layer 1114 a can cover the firstregion 1115 a and the second region 1115 b of the second surface 1115 toform a surface substantially parallel to the upper surface 1110 a of theinsulative substrate 1110. The wire 1116 includes a conductive channel1116 a penetrating the first insulative layer 1114 a for electricallyconnecting with the first region 1115 a or the second region 1115 b, anda bridge 1116 b laterally extending along a surface of the firstinsulative layer 1114 a and connecting to the conductive channels 1116 aof the neighboring light-emitting units 1112. The bridge 1116 b canconnect to identical/different polarities of two differentlight-emitting units 1112 for forming a serial/parallel/ininverse-parallel connection. The second insulative layer 1114 b cancover the insulative layer 1114 a and the bridge 1116 b.

The light-emitting unit 1112 includes a first semiconductor layer 1101having the first surface 1113 and the first region 1115 a of the secondsurface 1115, a second semiconductor layer 1102 having the second region1115 b of the second surface 1115, and an active layer 1103 between thefirst semiconductor layer 1101 and the second semiconductor layer 1102.The first semiconductor layer 1101 has the first polarity and the secondsemiconductor layer 1102 has the second polarity different from thefirst polarity. In the embodiment, the first polarity of the firstsemiconductor layer 1101 is n-type; the second polarity of thesemiconductor layer 1102 is p-type. The first region 1115 a of thesecond surface 1115 is farther from the insulative substrate 1110 thanthe second region 1115 b to expose the first semiconductor layer 1101.The insulative layer 1114 covers the second surface 1115 and fills aconvex-concave structure formed by the first region 1115 a and thesecond region 1115 b. There can be multiple first regions 1115 a of thelight-emitting unit 1112 which connect to a plurality of the conductivechannels 1116 a, and lateral sides of the conductive channels 1116 awhich connect to the first regions 1115 a are covered by the firstinsulative layer 1114 a so as to be electrically insulated from thesecond region 1115 b of the second semiconductor 1102 of the individuallight-emitting unit 1112. Similar to the first embodiment, a conductivelayer 1104 with reflectivity and a barrier 1105 covering the conductivelayer 1104 can be formed on the second region 1115 b. The firstelectrode 1118 can electrically connect with the first region 1115 a ofthe light-emitting unit 1112 via the bridge 1116 b; the second electrode1120 can electrically connect with the second region 1115 b of thelight-emitting unit 1112 via the barrier 1105. The bridge 1116 bconnecting to the first electrode 1118 is co-planar with a firstexposing surface 1114 c of the second insulative layer 1114 b; thebarrier 1105 connecting to the second electrode 1120 is co-planar with asecond exposing surface 1114 d of the first insulative layer 1114 awherein the first exposing surface 1114 c is closer to the insulativesubstrate 1110 than the second exposing surface 1114 d. A light-emittingarray 1100 including a circuit in series/in parallel/ininversed-parallel can be formed between the first electrode 1118 and thesecond electrode 1120.

Light from each of the light-emitting unit 1112 emits out of the firstsurface 1113, the wires 1116 are located below all of the light-emittingunits 1112, and the first electrode 1118 and the second electrode 1120are side by side with all of the light-emitting units 1112. Accordingly,the light is not shaded by the wires 1116, the first electrode 1118, andthe second electrode 1120 disclosed in the embodiment.

FIG. 12 illustrates a light-emitting array in accordance with aneleventh embodiment of the application. The embodiment is similar to thetenth embodiment but the differences are as follows. Each oflight-emitting units 1222 disclosed in the embodiment is similar tothose in the first embodiment, a first region 1215 a and a second region1215 b can have patterns as shown in FIG. 4 to FIG. 10. The first region1215 a of each of the light-emitting units 1222 has only a conductivechannel 1216 a connecting to a bridge 1216 b, and a cross section of theconductive channel 1216 a is bigger than that of the tenth embodiment,wherein two of the conductive channels 1216 respectively electricallyconnect with the first region 1215 a of one of the light-emitting unit1212 and the second region 1215 b of another one of the light-emittingunit 1212 and extend to a surface of a second insulative layer 1214 bdevoid of the light-emitting units 1212. A first electrode 1218 and asecond electrode 1220 can be formed on two of the conductive channels1216. A light-emitting array 1200 including a circuit in series/inparallel/in inversed-parallel can be formed between the first electrode1218 and the second electrode 1220.

FIG. 13 illustrates a light-emitting array in accordance with a twelfthembodiment of the application. The embodiment is similar to the tenthembodiment but the differences are as follows. A conductive substrate1310 disclosed in the embodiment replaces the insulative substratedisclosed in the tenth embodiment; a conductive joining layer 1324replaces the insulative joining layer disclosed the tenth embodiment.Additionally, conductive channels 1316 a are connected to a first region1315 a of a light-emitting unit 1312, penetrate a first insulative layer1314 a and a second insulative layer 1314 b, and electrically connectwith a conductive joining layer 1324. An electrode 1320 electricallyconnects with a second region 1315 b of the light-emitting unit 1312,and a light-emitting array 1300 including a circuit in series/inparallel/in inverse-parallel can be formed between the electrode 1320and the conductive substrate 1310. As the tenth embodiment recited, thefirst region 1315 a has the n-type polarity and the second region 1315 bhas the p-type polarity. Accordingly, for the embodiment, the n-typepolarity is conducted to the conductive substrate 1310. In otherembodiments, the p-type polarity can be conducted to the conductivesubstrate 1310. The material of the conductive substrate 1310 can bereferred those disclosed in the first embodiment.

FIG. 14 illustrates a light-emitting array in accordance with athirteenth embodiment of the application. The embodiment is similar tothe eleventh embodiment but the differences are as follows. A conductivesubstrate 1410 disclosed in the embodiment replaces the insulativesubstrate of the eleventh embodiment, and a conductive joining layer 142disclosed in the embodiment replaces the joining layer of the eleventhembodiment. A conductive channel 1416 b connects to a second region 1415b of a light-emitting unit 1412, penetrates a first insulative layer1414 a and a second insulative layer 1414 b, and electrically connectswith a conductive joining layer 1424. An electrode 1418 electricallyconnects with a first region 1415 a of the light-emitting unit 1412 anda light-emitting array 1400 including a circuit in series/in parallel/ininverse-parallel can be formed between the electrode 1418 and theconductive substrate 1410. As the tenth embodiment recited, the firstregion 1415 a has the n-type polarity and the second region 1415 b hasthe p-type polarity. Accordingly, in the embodiment, the p-type polarityis conducted to the conductive substrate 1410; in other embodiments, then-type polarity can be conducted to the conductive substrate 1410. Thematerial of the conductive substrate 1410 can be referred to thosedisclosed in the first embodiment.

The principle and the efficiency of the present application illustratedby the embodiments above are not the limitation of the application. Anyperson having ordinary skill in the art can modify or change theaforementioned embodiments. Therefore, the protection range of therights in the application will be listed as the following claims.

What is claimed is:
 1. A light-emitting device, comprising: alight-emitting stack comprising a first semiconductor layer, a secondsemiconductor layer, and an active layer between the first semiconductorlayer and the second semiconductor layer, wherein the firstsemiconductor layer comprises a first surface, a second surface oppositeto the first surface, a first portion connecting to the first surface,and a second portion connecting to the first portion; an openingpenetrating the first portion of the first semiconductor from the firstsurface and having a first width; a depression connecting to the openingand penetrating the second semiconductor layer, the active layer, andthe second portion of the first semiconductor layer, wherein thedepression has a second width greater than the first width and comprisesa bottom to expose the second surface; and an electrode located in thedepression and corresponding to the opening.
 2. The light-emittingdevice of claim 1, further comprising an insulative structure fillingthe depression and covering the electrode.
 3. The light-emitting deviceof claim 2, wherein the electrode is connected to the second surface. 4.The light-emitting device of claim 3, further comprising a wiringelectrode formed in the depression and connecting to the electrode. 5.The light-emitting device of claim 3, wherein the insulative structureseparates the electrode, the active layer, and the second semiconductorlayer.
 6. The light-emitting device of claim 2, further comprising aconductive structure connecting to the second semiconductor layerwherein the conductive structure comprises a conductive layerelectrically connecting with the second semiconductor layer and abarrier covering the second semiconductor layer.
 7. The light-emittingdevice of claim 6, wherein the conductive layer is a metal havingreflectivity and comprising nickel (Ni), platinum (Pt), palladium (Pd),silver (Ag), chromium (Cr), or combinations thereof, and the barriercomprises titanium (Ti), tungsten (W), platinum (Pt), titanium tungsten(TiW), or combinations thereof.
 8. The light-emitting device of claim 6,wherein the insulative structure is below the second semiconductor andthe conductive structure comprises conductive channels penetrating theinsulative layer and connecting to the second semiconductor layer. 9.The light-emitting device of claim 6, further comprising a metalreflective layer below the conductive structure and the insulativestructure, a conductive joining layer below the metal reflective layer,and a conductive substrate below the conductive joining layer.
 10. Thelight-emitting device of claim 1, wherein the electrode comprises atleast one of wiring electrodes and an extensive electrode extending fromthe wiring electrode.
 11. The light-emitting device of claim 10, whereinthe wiring electrode is located at a corner of the light-emittingdevice, and the extensive electrode extends in a direction far away fromthe wiring electrode, or the wiring electrode is located at a corner ofthe light-emitting device, and the extensive electrode extends alongsurroundings of the light-emitting device, or the wiring electrode islocated at a geometric center of the light-emitting device and theextensive electrode comprises a plurality of radial branches extendingfrom the wiring electrode, or the wiring electrode comprises a firstelectrode and a second electrode on a side of the light-emitting device,and the extensive electrode comprises a plurality of radial branchesextending from the first electrode and the second electrode to anopposite side, opposite to the side, and a connective electrodeconnecting with the first electrode and the second electrode.
 12. Thelight-emitting device of claim 1, wherein the first surface of the firstsemiconductor layer is devoid of a structure shielding light emittedfrom the active layer
 13. The light-emitting device of claim 1, whereinthe first semiconductor layer comprises an n-type semiconductor layerand the second semiconductor layer comprises a p-type semiconductorlayer.
 14. The light-emitting device of claim 1, wherein a size of thelight-emitting device is 1 mil to 70 mils.
 15. A light-emitting array,comprising: a substrate comprising an upper surface; a plurality oflight-emitting units on the upper surface of the substrate wherein eachof the light-emitting units comprises a first surface and a secondsurface opposite to the first surface toward to the upper surface; aninsulative layer between the substrate and the light-emitting units andcovering the second surface of each of the light-emitting units; and awire embedded in the insulative layer, wherein the wire comprises aconductive channel, penetrating the insulative layer and electricallyconnecting with the second surface and a bridge connecting with theconductive channel, and the bridge electrically connects with two of thelight-emitting units via the conductive channel.
 16. The light-emittingarray of claim 15, wherein the first surface has a first polarity, thesecond surface comprises a first region with the first polarity and asecond region nearer the upper surface than the first region with asecond polarity, and the conductive channel electrically connects withthe first region or the second region.
 17. The light-emitting array ofclaim 16, wherein the substrate is a conductive substrate, and one ofthe light-emitting units comprises the conductive channel electricallyconnecting the second region with the conductive substrate orelectrically connecting the first region with the conductive substrate.18. The light-emitting array of claim 16, further comprising aconductive joining layer between the conductive substrate and theinsulative layer.
 19. The light-emitting array of claim 16, wherein eachof the light emitting units comprises a plurality of the first regionsand each of the first regions connects to a plurality of conductivechannels.
 20. The light-emitting array of claim 16, further comprisingan electrode on a surface of the insulative layer opposite to the uppersurface, located outside each of the light-emitting units, andelectrically connecting with the bridge which electrically connects withthe first region or the second region of one of the light-emittingunits.